Another common situation is the parallel RC circuit that involves the parallel connection of a resistor and a capacitor.
This behaviour is commonly observed for resistors with a high nominal resistance, where parasitic capacitance occurs at higher frequencies and arises from the capacitor formed by the resistor’s contacts.
Moreover, a parallel RC is a simple equivalent circuit used for the characterisation of many real-life objects (e.g. thin layers of semiconductor materials), where \(R\) describes the charge-transport (leakage/conductive) pathway and \(C\) represents the dielectric response of the layer.
To obtain the impedance of the parallel connection we add the reciprocals of the branch impedances:
\[
\frac{1}{Z} = \frac{1}{R} + j\,\omega C \tag{16}
\]
For parallel circuits it is usually more efficient to work with the reciprocal of impedance, the admittance, \(Y \equiv 1/Z\). In this case:
\[
Y = \frac{1}{R} + j\,\omega C \tag{17}
\]
Define the conductance and susceptance as \(G \equiv 1/R\) and \(B \equiv \omega C\), so that
\[
Y = G + jB. \tag{18}
\]
The impedance is the reciprocal of the admittance:
\[
Z = \frac{1}{Y} = \frac{G - jB}{G^{2}+B^{2}}. \tag{19}
\]
Substituting \(G=1/R\) and \(B=\omega C\) and simplifying gives
\[
Z = \frac{\tfrac{1}{R} - j\,\omega C}{\left(\tfrac{1}{R}\right)^{2}+(\omega C)^{2}}
= \frac{R}{1+(\omega R C)^{2}} - j\,\frac{\omega R^{2} C}{1+(\omega R C)^{2}}. \tag{20}
\]
Hence, the magnitude and phase are
\[
|Z| = \frac{R}{\sqrt{1+(\omega R C)^{2}}} \tag{21}
\]
\[
\varphi = -\arctan(\omega R C). \tag{22}
\]
Thus, in the Nyquist representation the impedance forms a semicircle of diameter \(R\), centred at \((R/2,\,0)\), starting at \(R\) (low frequency) and ending at the origin (high frequency).
In the Bode representation, the magnitude is inversely proportional to frequency (a straight line of slope \(-1\) on a log–log scale) while the phase shifts from \(0^{\circ}\) to \(-90^{\circ}\).
These behaviours are seen in the simulation in Figure 6.
How should we read the Nyquist diagram?
If we substitute \(f \to 0\) into equation (20), only the real part remains.
Thus, in the Nyquist plot the frequency sweep starts at the farthest point on the real (resistance) axis.
As the frequency increases towards infinity (\(f \to \infty\)), the impedance approaches the origin of the complex plane.
Changing the capacitance value does not alter the semicircular shape, but it shifts the locus of measured impedance points — effectively
stretching or compressing the arc along the frequency axis.
The arc reaches its extremal value — in this representation a minimum, since we plot the loop-sided imaginary axis (\(-jX\)) —
at the characteristic angular frequency
\[
\omega_{\mathrm{c}} = \frac{1}{R C}. \tag{23}
\]
At this point, located at the middle of the semicircle (\(\Re(Z) = R/2\)), the impedance characteristics are:
\[
|Z| = \frac{R}{\sqrt{2}}, \quad
\varphi = -45^{\circ}, \quad
\Re(Z) = \frac{R}{2}, \quad
(-jX)_{\min} = \frac{R}{2}. \tag{24}
\]